GB/T 41064-2021 Surface chemical analysis—Depth profiling—Method for sputter rate determination in X-ray photoelectron spectroscopy,Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films
GB/T 41064-2021 Surface chemical analysis—Depth profiling—Method for sputter rate determination in X-ray photoelectron spectroscopy,Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films
Basic Information
Scope
This document specifies a method for calibrating the sputtering depth of materials by measuring the sputtering rate. Specifically, under certain sputtering conditions, the sputtering rate of a reference material with a single-layer or multi-layer film is measured, which is used to calibrate the depth of the film layer of the same material. When performing depth analysis using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), this method achieves an accuracy of 5% to 10% for film layers with a thickness between 20 nm and 200 nm. The sputtering rate is determined by the film layer thickness and sputtering time between the interfaces of the reference material. By using the known sputtering rate and combining it with the sputtering time, the film layer thickness of the tested sample can be obtained. The measured ion sputtering rate can be used to predict the ion sputtering rate of various other materials, allowing the depth scale and sputtering time of these materials to be estimated based on the tabulated values of sputtering yield and atomic density.