GB/T 6256-1986
Active
GB/T 4587-2023
Active
National standards
GB/T 4587-2023 Semiconductor devices—Discrete devices—Part 7:Bipolar transistors
GB/T 4587-2023 Semiconductor devices—Discrete devices—Part 7:Bipolar transistors
Basic Information
Standard Code:
GB/T 4587-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Diode
Publish Date:
2023-09-07
Implement Date:
2024-04-01
Publisher:
国家市场监督管理总局、国家标准化管理委员会
Technical Committee:
全国半导体器件标准化技术委员会(SAC/TC 78)
Pages:
94 pages
Scope
本文件给出了下列几种类型双极型晶体管(微波晶体管除外)的有关要求：--小信号晶体管（开关和微波用除外）；--线性功率晶体管（开关、高频和微波用除外）；--放大和振荡用高频功率晶体管；--高速开关和电源开关用开关晶体管；--电阻偏置晶体管。
Development Information
Drafting Units:
石家庄天林石无二电子有限公司、中国电子科技集团公司第十三研究所、哈尔滨工业大学、捷捷半导体有限公司
Drafting Persons:
赵玉玲、吕瑞芹、李丽霞、宋凤领、李兴冀、王立康、韩东、张超、杨剑群、张世景、赵山林
Replace the following standards
Referenced Standards
GB/T 2900.66-2004 Electrotechnical terminology—Semiconductor devices and integrated circuits
IEC 60747-1:2006
IEC 60747-4:2007
Adopt standards
IEC 60747-7:2019
Related Standards
GB/T 12300-1990
Active
GB/T 12300-1990 Test methods of safe operating area for power transistors
GB/T 16468-1996
Active
GB/T 16468-1996 Series programmes for static induction transistors
GB/T 6218-1996
Active
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications
GB/T 7577-1996
Active
GB/T 7577-1996 Blank detail specification for case-rated bipolar transistors for low-frequency amplification
GB/T 17007-1997
Abolished