GB/T 6256-1986
Active
SJ/T 9014.8.2-2018
Active
Industry standards-Electronics
SJ/T 9014.8.2-2018 Semiconductor Devices, Discrete Devices Part 8-2: Ultra Junction Metal Oxide Semiconductor Field Effect Transistor Blank Specification Manual
SJ/T 9014.8.2-2018 Semiconductor Devices, Discrete Devices Part 8-2: Ultra Junction Metal Oxide Semiconductor Field Effect Transistor Blank Specification Manual
Price:
$ 30
Basic Information
Standard Code:
SJ/T 9014.8.2-2018
Standard Type:
Industry standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Field-effect devices
ICS Name:
Diode
Publish Date:
2018-04-30
Implement Date:
2018-07-01
Pages:
16 pages
Development Information
Related Standards
GB/T 12300-1990
Active
GB/T 12300-1990 Test methods of safe operating area for power transistors
GB/T 16468-1996
Active
GB/T 16468-1996 Series programmes for static induction transistors
GB/T 6218-1996
Active
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications
GB/T 7577-1996
Active
GB/T 7577-1996 Blank detail specification for case-rated bipolar transistors for low-frequency amplification
GB/T 17007-1997
Abolished