GB/T 6256-1986
Active
GB/T 21039.1-2007
Active
National standards
GB/T 21039.1-2007 Semiconductor devices—Discrete devices—Part 4-1:Microwave diodes and transistors—Microwave field effect transistors—Blank detail specification
GB/T 21039.1-2007 Semiconductor devices—Discrete devices—Part 4-1:Microwave diodes and transistors—Microwave field effect transistors—Blank detail specification
Basic Information
Standard Code:
GB/T 21039.1-2007
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor diode
ICS Name:
Diode
Publish Date:
2007-06-29
Implement Date:
2007-11-01
Pages:
13 pages
Scope
This blank detailed specification is one of a series of blank detailed specifications for semiconductor devices, and should be used in conjunction with the following national standards.
Development Information
Adopt standards
IEC 60747-4-1:2000
Related Standards
GB/T 12300-1990
Active
GB/T 12300-1990 Test methods of safe operating area for power transistors
GB/T 16468-1996
Active
GB/T 16468-1996 Series programmes for static induction transistors
GB/T 6218-1996
Active
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications
GB/T 7577-1996
Active
GB/T 7577-1996 Blank detail specification for case-rated bipolar transistors for low-frequency amplification
GB/T 17007-1997
Abolished