GB/T 44081-2024 Thermal runaway test for bypass diode applied in photovoltaic modules

Scope

This document describes a test method for evaluating the thermal runaway of bypass diodes in photovoltaic modules. The test method is used to assess whether the bypass diodes already installed in photovoltaic modules are prone to thermal runaway, or whether the heat dissipation capacity of the junction box prevents the diodes from overheating when switching from forward bias to reverse bias. This document is applicable to the testing of Schottky diodes, as Schottky diodes exhibit the characteristic that their leakage current increases with increasing reverse bias at high temperatures, which makes them prone to thermal runaway. For samples using P-N junction diodes as bypass diodes, the thermal runaway test method required by this document is not necessary, as P-N junction diodes have a strong ability to withstand reverse bias.

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