SJ/T 1832-2016 Active Industry standards-Electronics

SJ/T 1832-2016 Detailed specification of NPN silicon small power switching transistor model 3DK102 in semiconductor discrete devices

Publish Date: 2016-04-05 Implement Date: 2016-09-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Price: $ 30

Basic Information

Standard Code: SJ/T 1832-2016

Standard Type: Industry standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor transistor

ICS Name: Diode

Publish Date: 2016-04-05

Implement Date: 2016-09-01

Pages: 11 pages

Development Information

Pages: 11 pages

Replace the following standards

SJ 1832-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK102

Related Standards

GB/T 6256-1986 Active

GB/T 6256-1986 Blank detail specification for industrial heating triodes

Publish Date: 1986-04-14

GB/T 12300-1990 Active

GB/T 12300-1990 Test methods of safe operating area for power transistors

Publish Date: 1990-01-10

GB/T 16468-1996 Active

GB/T 16468-1996 Series programmes for static induction transistors

Publish Date: 1996-07-09

GB/T 6218-1996 Active

GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications

Publish Date: 1996-07-09

GB/T 7577-1996 Active

GB/T 7577-1996 Blank detail specification for case-rated bipolar transistors for low-frequency amplification

Publish Date: 1996-07-09

GB/T 17007-1997 Abolished

GB/T 17007-1997 Measuring methods for insulated-gate bipolar transistor

Publish Date: 1997-10-05