GB/T 7581-1987
Active
DB61/T 1448-2021
Active
Shaanxi ProvinceLocal standards
DB61/T 1448-2021 DB61/T 1448-2021 Specification for intermittent life test of high-power semiconductor discrete devices
DB61/T 1448-2021 DB61/T 1448-2021 Specification for intermittent life test of high-power semiconductor discrete devices
Basic Information
Standard Code:
DB61/T 1448-2021
Standard Type:
Local standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Semiconductor discrete devices
Publish Date:
2021-03-22
Implement Date:
2021-04-22
Pages:
9 pages
Scope
This document specifies the terms and definitions, test systems, test procedures, failure criteria, and requirements for test reports for the intermittent life test of high-power semiconductor discrete devices (hereinafter referred to as "devices"). This document is applicable to the intermittent life test of high-power bipolar transistors, field-effect transistors, insulated-gate field-effect transistors, diodes, and other semiconductor discrete devices.
Development Information
Related Standards
GB/T 4586-1994
Active
GB/T 4586-1994 Semiconductor devices Discrete devices—Part 8:Field-effect transistors
GB/T 4587-1994
Replaced
GB/T 4587-1994 Semiconductor discrete devices and integrated circuits—Part 7:Bipolar transistors
GB/T 4937-1995
Replaced
GB/T 4937-1995 Mechanical and climatic test methods for semiconductor devices
GB/T 9313-1995
Active
GB/T 9313-1995 General specifications for CRT display device of computer
GB/T 8446.1-2004
Replaced