GB/T 6256-1986
Active
GB/T 45716.1-2026
Pending
National standards
GB/T 45716.1-2026 Semiconductor devices—Bias-temperature instability test for metal-oxide semiconductor field-effect transistors(MOSFETs)—Part 1:Fast bias-temperature instability test for MOSFETs
GB/T 45716.1-2026 Semiconductor devices—Bias-temperature instability test for metal-oxide semiconductor field-effect transistors(MOSFETs)—Part 1:Fast bias-temperature instability test for MOSFETs
Price:
$ 75
Basic Information
Standard Code:
GB/T 45716.1-2026
Standard Type:
National standards
Standard Status:
Pending
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Diode
Publish Date:
2026-04-30
Implement Date:
2026-11-01
Pages:
24 pages
Scope
This document describes the rapid bias temperature instability (BTI) test method for silicon metal oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terminology related to the conventional BTI test method.
Development Information
Adopt standards
IEC 62373-1:2020
Related Standards
GB/T 12300-1990
Active
GB/T 12300-1990 Test methods of safe operating area for power transistors
GB/T 16468-1996
Active
GB/T 16468-1996 Series programmes for static induction transistors
GB/T 6218-1996
Active
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications
GB/T 7577-1996
Active
GB/T 7577-1996 Blank detail specification for case-rated bipolar transistors for low-frequency amplification
GB/T 17007-1997
Abolished