GB/T 7581-1987
Active
DB13/T 5696-2023
Active
Hebei ProvinceLocal standards
DB13/T 5696-2023 The rapid screening method for defects in GaN HEMT RF power devices based on high-temperature reverse bias testing
DB13/T 5696-2023 The rapid screening method for defects in GaN HEMT RF power devices based on high-temperature reverse bias testing
Basic Information
Standard Code:
DB13/T 5696-2023
Standard Type:
Local standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Semiconductor discrete devices
Publish Date:
2023-05-06
Implement Date:
2023-06-06
Pages:
13 pages
Development Information
Related Standards
GB/T 4586-1994
Active
GB/T 4586-1994 Semiconductor devices Discrete devices—Part 8:Field-effect transistors
GB/T 4587-1994
Replaced
GB/T 4587-1994 Semiconductor discrete devices and integrated circuits—Part 7:Bipolar transistors
GB/T 4937-1995
Replaced
GB/T 4937-1995 Mechanical and climatic test methods for semiconductor devices
GB/T 9313-1995
Active
GB/T 9313-1995 General specifications for CRT display device of computer
GB/T 8446.1-2004
Replaced