GB/T 40109-2021 Active National standards

GB/T 40109-2021 Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of boron in silicon

GB/T 40109-2021 Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of boron in silicon

Publish Date: 2021-05-21 Implement Date: 2021-12-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 40109-2021
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Basic standards and general methods
ICS Name: Chemical analysis
Publish Date: 2021-05-21
Implement Date: 2021-12-01
Pages: 12 pages

Scope

This document describes the method of performing a deep analysis of boron in silicon using a sector magnetic field or a quadrupole secondary ion mass spectrometer, as well as the method of deep calibration using a stylus surface profiler or an optical interferometer.
This document is suitable for monocrystalline silicon, polycrystalline silicon, or amorphous silicon samples with a boron atom concentration range of 1×1016 atoms/cm3 to 1×1020 atoms/cm3, and a sputtering arc pit depth of 50 nm or more.

Development Information

Word Count: 20 Thousand words Pages: 12 pages

Referenced Standards

ISO 14237:2010

Adopt standards

ISO 17560:2014

Related Standards

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