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GB/T 1553-2009
GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
Abstract
1.1 This standard specifies the measurement method for the lifetime of minority carriers in single crystals of silicon and germanium. This standard is applicable to the measurement of the non-equilibrium lifetime of minority carriers during carrier recombination in non-intrinsic single crystals of silicon and germanium.
1.2 This standard uses the pulse light method. This method does not damage the intrinsic properties of the sample, and the sample can be tested repeatedly, but the sample must have special strip dimensions and a polished surface, as shown in Table 1.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 1553-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
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