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GB/T 6617-2009 Active
GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe
Abstract
This standard specifies the extended resistance probe measurement method for the resistivity of silicon wafers.
This standard is applicable to measuring the resistivity of silicon wafers with known crystal orientation and conductivity type, and measuring the resistivity of the epitaxial layer of silicon wafers with the same or opposite substrate type. The measurement range is: 10-3 Ω·cm to 102 Ω·cm.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 6617-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
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