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GB/T 42902-2023 Active
GB/T 42902-2023 Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method
Abstract
This document describes the method of testing surface defects on silicon carbide epitaxial wafers using laser scattering.
This document is applicable to the surface defect testing of 4H-SiC epitaxial wafers.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 42902-2023 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2024-03-01 |
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