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GB/T 13389-2014 Active
GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon
Abstract
This standard specifies the conversion relationship between the resistivity of boron-doped, phosphorus-doped, and arsenic-doped silicon single crystals and the concentration of dopants. This conversion relationship also applies to antimony-doped silicon single crystals, and can be extended to other dopants in silicon with activation energies similar to those of boron and phosphorus.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 13389-2014 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2015-09-01 |
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