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GB/T 24581-2009
GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
Abstract
2.1 This standard is applicable to the detection of the content of electroactive elements boron (B), phosphorus (P), arsenic (As), aluminum (Al), antimony (Sb), and gallium (Ga) in silicon single crystals. 2.2 The concentration range of each electroactive element impurity or dopant in silicon covered by this standard is (0.01×10 -9 to 5.0×10 -9) a.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 24581-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
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