T/CES 085-2021 High-temperature reverse-bias test specification for crimp-type insulated gate bipolar transistor (IGBT) modules
T/CES 085-2021 High temperature reverse bias test specification for compression type insulated gate bipolar transistor (IGBT) module
Basic Information
Scope
Scope: This document specifies the test circuit, equipment requirements, test conditions, test procedures, acceptance criteria, etc. for the high-temperature reverse-bias test of crimped insulated gate bipolar transistor (IGBT) modules. This document is applicable to crimped IGBT modules used in power electronic devices of power grids. Other new types of IGBT modules, such as enhanced injection IGBT (IEGT) and dual-mode insulated gate transistors (BIGT), can also refer to this document. Main technical content: This standard is applicable to crimped IGBT modules used in power electronic devices of power grids. Other new types of IGBT modules, such as enhanced injection IGBT (IEGT) and dual-mode insulated gate transistors (BIGT), can also refer to this standard. This standard introduces the relevant content of the high-temperature reverse-bias test of crimped IGBT modules, including the scope of application, the definition of related terms, equipment requirements, test procedures, cooling, testing, and failure standards, etc. This standard takes into account the particularities of crimped IGBT modules and provides more targeted and detailed specifications and special requirements for testing methods and equipment, which can effectively solve the problems of long testing time, high testing cost, and low testing efficiency, and provide a basic guarantee for the widespread application of crimped IGBT modules. The main contents are as follows: Foreword 1 Scope 2 Normative reference documents 3 Terms and definitions 4 Symbols and abbreviations 5 Test circuit 6 Equipment requirements 7 Test conditions 8 Test procedures 9 Failure criteria 10 Test time determination 11 Test report