T/CASAS 001-2018 Active Group standards

T/CASAS 001-2018 Silicon Carbide Schottky Barrier Diode Generic Specification

Publish Date: 2018-09-21 Implement Date: 2018-09-21 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CASAS 001-2018

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor discrete devices

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2018-09-21

Implement Date: 2018-09-21

Scope

Main technical content: Silicon carbide (SiC) is currently one of the most mature wide-bandgap semiconductors, with higher breakdown electric field strength, faster saturation speed and electron drift speed, wider bandgap width, and higher thermal conductivity than silicon. It can be used to produce more efficient, high-temperature, high-frequency, high-power, and radiation-resistant power devices with superior performance. It can not only be widely applied in traditional industrial fields such as DC and AC power transmission, uninterruptible power supplies, switching power supplies, and industrial control, but also has broad application prospects in fields such as solar energy, wind energy, electric vehicles, and aerospace. With the technological development of SiC Schottky barrier diodes and the gradual opening of the market, the standards for Si diodes in some aspects cannot reflect the superior characteristics of SiC diodes and also restrict the development of some outstanding characteristics of SiC diodes. Therefore, the "General Technical Specifications for Silicon Carbide Schottky Barrier Diodes" are formulated to support the design, production, measurement, and acceptance of products.