T/CASAS 003-2018 Active Group standards

T/CASAS 003-2018 4H-SiC epilayer wafer for p-type IGBT devices

Publish Date: 2018-11-20 Implement Date: 2018-11-20 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CASAS 003-2018

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2018-11-20

Implement Date: 2018-11-20

Scope

Main technical content: SiC semiconductor materials, with their unique excellent performance, are particularly suitable for the fabrication of high-voltage and ultra-high-voltage power devices. Most high-voltage/ultra-high-voltage SiC power devices above 10kV are vertical structure bipolar devices, such as SiC PiN diodes, IGBTs, and GTO thyristors. From a structural perspective, n-channel IGBTs are similar to n-channel MOSFET devices, except that the n+ type substrate in the n-channel MOSFET material structure needs to be replaced by a p+ type substrate. Due to the lack of p+ type 4H-SiC substrates with acceptable resistance on the market, the fabrication of n-channel IGBT device materials requires the use of an inverted n-channel IGBT device structure, which is a complex manufacturing process. Compared with n-channel IGBTs, p-channel IGBT device materials not only have a simple manufacturing process but also can use higher quality n+ type 4H-SiC substrates. That is, p-channel IGBT device materials are p-n junction materials composed of an epitaxial p+ type 4H-SiC drift layer/voltage barrier layer on an n+ type 4H-SiC substrate. It is this p+ type drift layer that enables p-channel IGBT devices to possess many excellent performance characteristics.