GB/T 14264-1993
Replaced
T/QGCML 2892-2023
Active
Group standards
T/QGCML 2892-2023 Electric vehicle electric drive technology specification for silicon carbide (SiC) field effect transistor (MOSFET) module
T/QGCML 2892-2023 Electric vehicle electric drive technology specification for silicon carbide (SiC) field effect transistor (MOSFET) module
Price:
$ 20.00
Basic Information
Standard Code:
T/QGCML 2892-2023
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
-
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2023-12-27
Implement Date:
2023-12-31
Scope
Main technical content: This document specifies the terms and definitions, symbols, limit values, technical requirements, test methods, inspection rules, marking, packaging, transportation, and storage for silicon carbide (SiC) field-effect transistor (MOSFET) modules used in electric vehicle electric drive systems. This document is applicable to silicon carbide (SiC) field-effect transistor (MOSFET) modules used in electric vehicle electric drive systems.
Development Information
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active