T/SEPA 4-2022 Partial discharge EFPI optical fiber ultrasonic sensor probe MEMS manufacturing technology Part 1: Process specification based on SOI silicon wafer

Scope

Scope: This document specifies the process specifications that SOI silicon wafers should follow when manufacturing partial discharge EFPI fiber ultrasonic sensor probes using MEMS technology, including process flow, process requirements, other requirements, and inspections. This document applies to the manufacturing and inspection of SOI chips for partial discharge EFPI ultrasonic sensor probes in power equipment. Main technical content: Partial discharge (PD) generates electromagnetic and acoustic signals, emits light, and causes chemical decomposition of insulating materials. These physical and chemical effects can be detected using various diagnostic methods and corresponding sensors. Among them, acoustic methods are commonly used to measure PD caused by insulation defects in power equipment, and sensors based on piezoelectric or acousto-optic effects can be selected. With the development of manufacturing and processing technologies, the use of MEMS (Microelectromechanical System) technology to manufacture PD EFPI (Extrinsic Fabry-Perot Interferometer) fiber ultrasonic sensor probes has been widely adopted. This document describes the "MEMS manufacturing technology for partial discharge EFPI fiber ultrasonic sensor probes" and focuses on the "process specifications based on SOI silicon wafers", including process flow, process requirements, other requirements, and inspections. It is applicable to the manufacturing and inspection of SOI chips for PD EFPI ultrasonic sensor probes in power equipment.

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