T/BSPT 002-2018 Active Group standards

T/BSPT 002-2018 Nano-fabrication using ion beam irradiation to induce strain-induced three-dimensional nanostructures and device processing methods

T/BSPT 002-2018 Nano-fabrication using ion beam irradiation to induce strain-induced three-dimensional nanostructures and device processing methods

Publish Date: 2018-06-20 Implement Date: 2018-07-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us
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Basic Information

Standard Code: T/BSPT 002-2018
Standard Type: Group standards
Standard Status: Active
is_force_gb: no
CCS Name: Power transmission and transformation equipment
ICS Name: The experimental conditions and procedures are summarized here
Publish Date: 2018-06-20
Implement Date: 2018-07-01

Scope

Scope: This standard specifies the processing method for fabricating three-dimensional nanostructures and devices using ion beam irradiation strain induction technology. This standard is applicable to the use of ion beam irradiation to control the spatial strain of nanowires and thin films, thereby realizing three-dimensional nanostructures and devices composed of one-dimensional nanowires and two-dimensional thin films in three-dimensional space; Main technical content: Ion beam irradiation technology can make collimated nanowires or planar nanothin films bend or fold in three-dimensional space due to strain, and has important application value in the fields of constructing high-performance three-dimensional micro-nano electronic devices, optoelectronic devices, and optical components. This standard provides a specification for a processing method for fabricating three-dimensional nanostructures and devices using ion beam irradiation strain induction technology. The issuing agency of this document draws attention to the fact that when declaring compliance with this document, it may involve the use of patents related to the deformation control of collimated nanowires or planar nanothin films [Articles 7.2 and 7.3], specifically related to the patents with patent numbers ZL201110113222.0 [A method for preparing three-dimensional superconducting micro-nano devices] and ZL201210540870.9 [A method for preparing three-dimensional self-supporting micro-nano functional structures based on thin film materials].

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