T/CASAS 034-2024 Active Group standards

T/CASAS 034-2024 Dynamic Resistance Test Method for GaN High Electron Mobility Transistors for Zero Voltage Soft-On Circuitry

Publish Date: 2024-09-30 Implement Date: 2024-09-30 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CASAS 034-2024

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: -

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2024-09-30

Implement Date: 2024-09-30

Scope

Scope: This document describes the dynamic on-resistance test method for GaN HEMTs used in zero-voltage soft-switching circuits. This document is applicable to work scenarios such as GaN HEMT production and R&D, characterization, mass production testing, reliability evaluation, and application assessment. It can be applied to the following devices: a) GaN enhanced-type and depleted-type discrete power electronics devices; b) GaN integrated power circuits; c) The above-mentioned wafer-level and packaging-level products. Main technical content: This document describes the dynamic on-resistance test method for GaN HEMTs used in zero-voltage soft-switching circuits. This document is applicable to work scenarios such as GaN HEMT production and R&D, characterization, mass production testing, reliability evaluation, and application assessment. It can be applied to the following devices: a) GaN enhanced-type and depleted-type discrete power electronics devices; b) GaN integrated power circuits; c) The above-mentioned wafer-level and packaging-level products.