T/CASAS 013-2021 Active Group standards

T/CASAS 013-2021 Carbon-dioxide-disseminated silicon crystal slip-line density detection method: KOH corrosion combined with image recognition method

Publish Date: 2021-11-01 Implement Date: 2021-12-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CASAS 013-2021

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical and chemical properties of metals

ICS Name: Vocabulary

Publish Date: 2021-11-01

Implement Date: 2021-12-01

Scope

Scope: This document specifies a method for detecting dislocation density in silicon carbide (SiC) wafers using chemical selective etching combined with image recognition. This document is applicable to the detection and statistical analysis of Si face dislocations in 4H and 6H-SiC wafer materials, with the material surface in a chemically polished state. Main technical content: Silicon carbide (here referring to 4H-SiC) materials, as important third-generation wide bandgap semiconductor materials, exhibit high critical breakdown field strength, high thermal conductivity, high electron saturation drift velocity, excellent mechanical properties, and physical and chemical stability, making them suitable for fabricating high-temperature, high-power devices. In recent years, with the continuous development of single-crystal and epitaxial film growth technologies, SiC single-polar devices such as Schottky diodes (SBDs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) have been commercialized, with rapidly increasing demand in various application fields. However, the presence of high-density dislocation defects in the material (typically 103-104 defects/cm2) limits their further development. SiC crystals primarily contain three types of dislocations: twin-sided dislocations (TSDs), edge dislocations (TEDs), and basal plane dislocations (BPDs). During epitaxial growth on a substrate, dislocation defects in the substrate can extend and transform into the epitaxial layer, leading to a large number of extended defects in the epitaxial layer. For example, twin-sided dislocations in the substrate can serve as nucleation centers for carrot defects in the epitaxial layer, and twin-sided dislocations in the substrate can transform into Frank-type layer faults (Frank SFs) in the epitaxial layer. Most basal plane dislocations in the substrate transform into edge dislocations, while some with helical features directly extend into the epitaxial layer. The presenc