T/CASAS 019-2021 Active Group standards

T/CASAS 019-2021 Micro-nano metal sintering body resistance measurement method: Four-probe method

Publish Date: 2021-11-01 Implement Date: 2021-12-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CASAS 019-2021

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical and chemical properties of metals

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2021-11-01

Implement Date: 2021-12-01

Scope

Scope: This document specifies the method for resistance rate testing of micro-nano metal sintered bodies used in the packaging of third-generation semiconductor devices. This document is applicable to the evaluation of the resistance rate of micro-nano metal sintered bodies used in the packaging of third-generation semiconductor devices; such sintered bodies do not include the connected components of the sintered parts (such as chips) or the connection substrates. This method is applicable to the testing of the volume resistance rate of circular micro-nano metal sintered bodies with a diameter greater than 10 times the probe spacing and a thickness less than 4 times the probe spacing, but it is not applicable to the testing of the square resistance rate of film samples. Main technical content: Metal interconnect materials play a key role in the semiconductor packaging industry. Traditional packaging uses solder alloy interconnects, but the precipitated intermetallic compounds lead to a low service temperature and high brittleness of the interconnect layer. As one of the most suitable interface connection technologies for the packaging of third-generation semiconductor modules, the new micro-nano silver and micro-nano copper-based interconnect technologies have the advantages of single component, low process temperature, and high service temperature, and the reliability of chip connection components can also be greatly improved. In particular, the sintered layer of micro-nano metal sintered bodies often has low resistance rate and high thermal conductivity, which makes them more suitable for future high-temperature and high-power density applications. Resistance rate is a key physical quantity that indicates the conductivity of materials. As an intrinsic parameter of materials, resistance rate is not directly related to the size and shape of materials. For example, the resistance rate of silver is 1.65 × 10-6Ω?cm, and the resistance rate of copper is 1.75 × 10-6Ω?cm