T/CASAS 009-2019 Active Group standards

T/CASAS 009-2019 The secondary ion mass spectrometry (SIMS) detection method is used to measure the trace impurity concentration and distribution in semi-insulating silicon carbide materials

Publish Date: 2019-11-25 Implement Date: 2019-11-25 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CASAS 009-2019

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Industrial technology glass

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2019-11-25

Implement Date: 2019-11-25

Scope

The main technical content: The high-precision characterization of the concentration and distribution of trace impurity elements in semiconductor materials is an important parameter affecting the performance of products at different stages of the industrial chain (such as substrates, epitaxial layers, chips, and devices). Secondary ion mass spectrometers are the most commonly used and accurate equipment for detecting the concentration and distribution of trace impurity elements in materials. At present, China's standards for high-precision detection of trace impurity concentrations and distributions in third-generation semiconductor materials by secondary ion mass spectrometry belong to a blank field. Therefore, the formulation of this standard will have a significant positive impact on the evaluation of the characteristic parameters of third-generation semiconductor materials and their industrial applications.