T/CASAS 032-2023 Active

Main technical content: This document describes the method of determining the content of metal elements on the surface of silicon carbide wafers by inductively coupled plasma mass spectrometry. This document is suitable for determining the content of trace metals such as sodium, aluminum, potassium, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, silver, tungsten, gold, and mercury on the surface of silicon carbide single-crystal polished wafers and silicon carbide epitaxial wafers, with a measurement range of 108 cm-2 to 1012 cm-2. This document is suitable for determining the content of trace metals on the surface of non-patterned silicon carbide wafers, including 100 mm (4 inch) to 200 mm (8 inch) silicon carbide native wafers and silicon carbide annealed wafers. Note: The content of metal elements on the surface of silicon carbide wafers is calculated in terms of the number of atoms per square centimeter.