PDF
GB/T 14146-2009
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
Abstract
This standard specifies the method of measuring the carrier concentration in silicon epitaxial layers using a mercury probe capacitance-voltage test. The thickness of the silicon epitaxial layer tested by this standard must be greater than the depth of the depletion layer under the test bias voltage. This standard can also be applied to the measurement of carrier concentration in polished silicon wafers.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 14146-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
Price
$ 44
Subtotal
$ 44
Tax
$ 0.00
Order Total (incl. tax)
$ 44