T/IAWBS 025-2025 Active Group standards

T/IAWBS 025-2025 Power cycling test methods for silicon carbide power devices

Publish Date: 2025-09-24 Implement Date: 2025-10-10 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 025-2025

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Medical electronic instruments and equipment

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2025-09-24

Implement Date: 2025-10-10

Scope

This document proposes the methods and steps that silicon carbide devices need to follow when conducting power cycle tests. This document is applicable to the testing of silicon carbide metal oxide field-effect transistors (SiC MOSFETs), silicon carbide (SiC) diodes, and devices with mixed packaging of the two. This document specifies the methods and steps that silicon carbide (SiC) diode devices, silicon carbide metal oxide field-effect transistors (SiC MOSFETs), and devices with mixed packaging of the two need to follow when conducting power cycle tests.