GB/T 1423-1996
Active
GB/T 26070-2010
Active
National standards
GB/T 26070-2010 Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
GB/T 26070-2010 Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
Basic Information
Standard Code:
GB/T 26070-2010
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Analysis methods for semi-metallic and semiconductor materials
ICS Name:
Other testing methods for metal materials
Publish Date:
2011-01-10
Implement Date:
2011-10-01
Pages:
12 pages
Scope
1.1 This standard specifies the test method for subsurface damage of III-V compound semiconductor single-crystal wafers.
1.2 This standard is applicable to the measurement of subsurface damage in compound semiconductor single-crystal wafers such as GaAs, InP (GaP and GaSb can be referenced for measurement).
Development Information
Related Standards
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GB/T 17433-1998
Replaced
GB/T 17433-1998 Foundation terms for chemical analysis of metallurgical products
GB/T 4334.1-2000
Replaced
GB/T 4334.1-2000 Method of 10 per cent oxalic acid etch test for stainless steels
GB/T 4334.2-2000
Replaced