GB/T 31225-2014 Active National standards

GB/T 31225-2014 Test method for the thickness of silicon oxide on Si substrate by ellipsometer

GB/T 31225-2014 Test method for the thickness of silicon oxide on Si substrate by ellipsometer

Publish Date: 2014-09-30 Implement Date: 2015-04-15 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 31225-2014
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Basic standards and general methods
ICS Name: Comprehensive measurement of length and angle
Publish Date: 2014-09-30
Implement Date: 2015-04-15
Pages: 9 pages

Scope

This standard provides a method for measuring the thickness of a silicon dioxide thin layer on a silicon surface using a spectral elliptical polarimeter with continuous wavelength and angle variations.
This standard is applicable to testing the thickness of a silicon dioxide thin layer with uniform thickness and isotropy on a silicon substrate, ranging from 10 nm to 1,000 nm. For the measurement of the thickness of single-layer dielectric thin films on other substrates that are not transparent at the test wavelength, this method can be referenced.

Development Information

Word Count: 14 Thousand words Pages: 9 pages

Referenced Standards

Related Standards

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