T/CASAS 022-2022 Active Group standards

T/CASAS 022-2022 General technical specifications for three-phase intelligent power meters using gallium nitride field effect transistors

Publish Date: 2022-12-09 Implement Date: 2022-12-09 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CASAS 022-2022

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: -

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2022-12-09

Implement Date: 2022-12-09

Pages: 13 pages

Scope

Scope: This document specifies the terms and definitions, symbols and abbreviations, technical requirements, test methods, inspection rules, and packaging, transportation, and storage for gallium nitride field-effect transistors (hereinafter referred to as "GaN transistors") applied to three-phase smart meters. This document is applicable to GaN field-effect transistors with a gate-source voltage (V_DS) rating of 900 V, a system output power range of 20 W–100 W, and an operating frequency of 40 kHz–500 kHz for use in three-phase smart meters and small line terminal power modules. Transistors in other application fields, such as small line terminals, can be used as a reference. Key technical content: This document is intended for GaN field-effect transistors used in three-phase smart meters and small line terminals. GaN exhibits a wide bandgap, high breakdown electric field, high thermal conductivity, high electron saturation rate, and radiation resistance, making it a promising candidate for applications in three-phase smart meters and small line terminals in power grids. With the continuous expansion of grid business needs, the new generation of three-phase smart meters and small line terminals is being promoted and gradually replacing traditional models, creating huge market demand. Compared with traditional three-phase smart meters and small line terminals, the new generation of devices incorporates GaN switching devices to replace silicon-based ones, improving power conversion efficiency, reducing power consumption, lowering power temperatures, and achieving better stability while saving energy in applications and reducing line losses. However, due to the relative immaturity of materials, processes, and device structures, GaN devices are still in the industrialization promotion phase. Key challenges include further enhancing breakdown voltage, reducing on-state resistance, and improving device safety and reliability, which are essential for integrating GaN p