GB/T 36474-2018 Active National standards

GB/T 36474-2018 Semiconductor integrated circuit—Measuring methods for double data rate 3 synchronous dynamic random access memory(DDR3 SDRAM)

GB/T 36474-2018 Semiconductor integrated circuit—Measuring methods for double data rate 3 synchronous dynamic random access memory(DDR3 SDRAM)

Publish Date: 2018-06-07 Implement Date: 2019-01-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 36474-2018
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Semiconductor integrated circuits
ICS Name: Integrated circuits, microelectronics
Publish Date: 2018-06-07
Implement Date: 2019-01-01
Pages: 15 pages

Scope

This standard specifies the methods for functional verification and electrical parameter testing of the third-generation double data rate synchronous dynamic random access memory (DDR3 SDRAM) in semiconductor integrated circuits.
This standard is applicable to the functional verification and electrical parameter testing of the third-generation double data rate synchronous dynamic random access memory (DDR3 SDRAM) in the field of semiconductor integrated circuits.

Development Information

Word Count: 26 Thousand words Pages: 15 pages

Referenced Standards

Related Standards

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