GB/T 29056-2012 Replaced National standards

GB/T 29056-2012 Trichlorosilane for silicon epitaxy—Determination of boron,aluminium,phosphorus,vanadium,chrome,manganese,iron,cobalt,nickel,copper,arsenic,molybdenum and antimony content—Inductively coupled plasma mass spectrometric method

GB/T 29056-2012 Trichlorosilane for silicon epitaxy—Determination of boron,aluminium,phosphorus,vanadium,chrome,manganese,iron,cobalt,nickel,copper,arsenic,molybdenum and antimony content—Inductively coupled plasma mass spectrometric method

Publish Date: 2012-12-31 Implement Date: 2013-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 29056-2012
Standard Type: National standards
Standard Status: Replaced
is_force_gb: no
CCS Name: Electronic devices and specialized materials, parts, and structural components
ICS Name: Special materials for electronic technology
Publish Date: 2012-12-31
Implement Date: 2013-10-01
Pages: 12 pages

Scope

This standard specifies the method for determining the trace element content of boron, aluminum, phosphorus, vanadium, chromium, manganese, iron, cobalt, nickel, copper, molybdenum, arsenic, and antimony in silicon epitaxy-grade trichlorosilane (SiHCl3) using inductively coupled plasma mass spectrometers (ICP-MS).
This standard is applicable to the determination of the content of boron, aluminum, phosphorus, vanadium, chromium, manganese, iron, cobalt, nickel, copper, molybdenum, arsenic, and antimony in silicon epitaxy-grade trichlorosilane (SiHCl3). The measurement ranges for each element are shown in Table 1.

Development Information

Word Count: 13 Thousand words Pages: 12 pages

Superseded by the following standards

Related Standards

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