GB/T 2413-1981
Active
GB/T 29056-2012
Replaced
National standards
GB/T 29056-2012 Trichlorosilane for silicon epitaxy—Determination of boron,aluminium,phosphorus,vanadium,chrome,manganese,iron,cobalt,nickel,copper,arsenic,molybdenum and antimony content—Inductively coupled plasma mass spectrometric method
GB/T 29056-2012 Trichlorosilane for silicon epitaxy—Determination of boron,aluminium,phosphorus,vanadium,chrome,manganese,iron,cobalt,nickel,copper,arsenic,molybdenum and antimony content—Inductively coupled plasma mass spectrometric method
Basic Information
Standard Code:
GB/T 29056-2012
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Electronic devices and specialized materials, parts, and structural components
ICS Name:
Special materials for electronic technology
Publish Date:
2012-12-31
Implement Date:
2013-10-01
Pages:
12 pages
Scope
This standard specifies the method for determining the trace element content of boron, aluminum, phosphorus, vanadium, chromium, manganese, iron, cobalt, nickel, copper, molybdenum, arsenic, and antimony in silicon epitaxy-grade trichlorosilane (SiHCl3) using inductively coupled plasma mass spectrometers (ICP-MS).
This standard is applicable to the determination of the content of boron, aluminum, phosphorus, vanadium, chromium, manganese, iron, cobalt, nickel, copper, molybdenum, arsenic, and antimony in silicon epitaxy-grade trichlorosilane (SiHCl3). The measurement ranges for each element are shown in Table 1.
Development Information
Superseded by the following standards
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GB/T 5594.2-1985
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GB/T 5594.2-1985 Test methods for properties of structure ceramic used in electronic components—Test method for Youngs elastic modulus and Poisson ratio
GB/T 5594.3-1985
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GB/T 5594.3-1985 Test methods for properties of structure ceramic used in electronic components—Test method for mean coefficient of linear expansion
GB/T 5594.4-1985
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