GB/T 41153-2021 Active National standards

GB/T 41153-2021 Determination of boron,aluminum and nitrogen impurity content in silicon carbide single crystal—Secondary ion mass spectrometry

GB/T 41153-2021 Determination of boron,aluminum and nitrogen impurity content in silicon carbide single crystal—Secondary ion mass spectrometry

Publish Date: 2021-12-31 Implement Date: 2022-07-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 41153-2021

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Analysis methods for semi-metallic and semiconductor materials

ICS Name: \nMetal material testing

Publish Date: 2021-12-31

Implement Date: 2022-07-01

Pages: 6 pages

Scope

This document specifies the secondary ion mass spectrometry test method for the impurity content of boron, aluminum, and nitrogen in silicon carbide single crystals. This document is applicable to the quantitative analysis of the impurity content of boron, aluminum, and nitrogen in silicon carbide single crystals, with a measurement range of boron content not less than 5×1013 cm-3, aluminum content not less than 5×1013 cm-3, and nitrogen content not less than 5×1015 cm-3, and the element concentration (percentage of atoms) not exceeding 1%.

Development Information

Word Count: 14 Thousand words Pages: 6 pages

Referenced Standards

GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 22461-2008 Surface chemical analysis—Vocabulary GB/T 22461.1-2023 Surface chemical analysis—Vocabulary—Part 1:General terms and terms used in spectroscopy GB/T 22461.2-2023 Surface chemical analysis—Vocabulary—Part 2:Terms used in scanning probe microscopy GB/T 32267-2015 Terminology of performance testing for analytical instrument GB/T 22461.3-2026 Surface chemical analysis—Vocabulary—Part 3:Terms used in optical interface analysis

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