T/CASAS 017-2021 Third-Generation Semiconductors Micro-Nano Metal Sintering Technology Terminology

Scope

Scope: This document specifies the definitions of related terms for micro-nano metal sintering technology used in the packaging of third-generation semiconductor devices, including general terms, terms related to sintering principles, terms related to sintering materials, terms related to sintering processes, and terms related to performance testing and reliability. This document is applicable to the packaging of third-generation semiconductor high-temperature working chips and substrates, and is used in optoelectronic devices, power devices, radio frequency devices, etc. It is also suitable for researchers and practitioners in the development, manufacturing, and related fields of device substrate and base plate connections, and base plate and heat sink connections. Main technical content: Third-generation semiconductor materials refer to wide bandgap semiconductor materials with significantly larger bandgaps than first-generation semiconductors (e.g., silicon and germanium) and second-generation semiconductors (e.g., gallium arsenide and indium phosphide). Currently, the industrialization of third-generation semiconductors mainly focuses on SiC and GaN. It has excellent performance such as large bandgap, high breakdown electric field, high thermal conductivity, high electron saturation drift velocity, and strong radiation resistance. Third-generation semiconductor devices (optoelectronic devices, power devices, radio frequency devices) have broad application prospects in fields such as semiconductor lighting, consumer electronics, 5G mobile communication, new energy vehicles, smart grids, and rail transportation. They are expected to break through the bottlenecks of traditional semiconductor technology, complement first- and second-generation semiconductor technologies, and play an important role in energy conservation and emission reduction, industrial transformation and upgrading, and the creation of new economic growth points. They are becoming a new strateg

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