GB/T 33657-2017 Nanotechnologies—Electrical operating parameter test specification of wafer level nano-scale phase change memory cells

Scope

This standard specifies the wafer test specifications for the read, write, and erase parameters of nanoscale phase-change memory cells. The test results can be used to characterize the electrical operability of phase-change memory materials or devices. This standard applies to phase-change memory cells with electrode dimensions smaller than 100 nm, which are manufactured using semiconductor wafer processing based on chalcogenide compounds as the main raw materials. Phase-change memory cells with dimensions between 100 nm and 300 nm can also be tested according to this standard. This standard does not apply to memory cells that include peripheral drive circuits.

Development Information

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