DB13/T 5695-2023 Active Hebei ProvinceLocal standards

DB13/T 5695-2023 The testing method for trap effect of GaN HEMT RF device

Publish Date: 2023-05-06 Implement Date: 2023-06-06 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: DB13/T 5695-2023

Standard Type: Local standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor discrete devices

ICS Name: Semiconductor discrete devices

Publish Date: 2023-05-06

Implement Date: 2023-06-06

Pages: 12 pages

Development Information

Pages: 12 pages

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