T/CASAS 035-2024 Active Group standards

T/CASAS 035-2024 is a dynamic conduction resistance testing method for gallium nitride high electron mobility transistors (HEMTs) used for third-quadrant freewheeling applications.

T/CASAS 035-2024 Test method for dynamic on-resistance of gallium nitride high electron mobility transistor (HEMT) used for tertiary phase current recharge

Publish Date: 2024-09-30 Implement Date: 2024-09-30 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CASAS 035-2024

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: -

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2024-09-30

Implement Date: 2024-09-30

Scope

Scope: This document can be used for wafer-level and packaging-level device product testing, but the thermal characteristics of the devices should be considered to minimize the impact of self-heating effects on the test results. Uncut small-power wafer-level devices have better heat dissipation capabilities relative to their power levels, while high-power wafer-level and packaging-level devices may experience significant junction temperature increases during continuous high-current testing and require heat dissipation treatment. Main technical content: This document describes a dynamic on-resistance testing method for GaN high-electron-mobility transistors (GaN HEMTs) used in the third-quadrant free-wheeling mode, including hard shutdown and zero-current shutdown. This document is suitable for GaN HEMT production and R&D, characterization, mass production testing, reliability evaluation, and application assessment. It can be applied to the following devices: a) GaN enhanced discrete power electronic devices; b) GaN integrated power circuits; c) the above-mentioned wafer-level and packaging-level products.