GB/T 3656-1983
Replaced
GB/T 43315-2023
Active
National standards
GB/T 43315-2023 Test method for flow pattern defects in silicon wafer—Etching technique
GB/T 43315-2023 Test method for flow pattern defects in silicon wafer—Etching technique
Basic Information
Standard Code:
GB/T 43315-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
\nMetal material testing
Publish Date:
2023-11-27
Implement Date:
2024-06-01
Pages:
6 pages
Scope
This document specifies the method of detecting flow pattern defects on silicon wafers using a metallographic microscope after chemical etching.
This document is applicable to the detection of flow pattern defects on silicon wafers with a resistivity greater than 1 Ω·cm.
Development Information
Referenced Standards
Related Standards
GB/T 3657-1983
Replaced
GB/T 3657-1983 Measurement method of direct magnetic properties of soft magnetic alloys
GB/T 3849-1983
Replaced
GB/T 3849-1983 Hardmetals—Rockwell hardness (scale A) test method
GB/T 3850-1983
Replaced
GB/T 3850-1983 Impermeable sintered metal materials and hardmetals—determination of density
GB/T 3851-1983
Replaced
GB/T 3851-1983 Hardmetals—determination of transverse rupture strength
GB/T 4326-1984
Replaced