T/IAWBS 006-2022 Test Method for Silicon Carbide Hybrid Modules
T/IAWBS 006-2022 Carbon-silicon mixed module product testing method
Basic Information
Scope
Scope: This document specifies the terminology, graphical symbols, basic rated values, characteristics, and test methods for hybrid power semiconductor modules composed of silicon-based insulated-gate bipolar transistors (IGBTs) and silicon carbide-based diodes; Main technical content: This standard targets hybrid power modules composed of silicon IGBTs and silicon carbide diodes, referencing the technical requirements of GB/T 29332, IEC 60747-2, and BS EN 60747-15, as well as those of mainstream foreign power semiconductor module manufacturers. It also combines the application requirements of hybrid modules to provide detailed specifications and requirements for device terminology, symbols, basic rated values, characteristics, and test methods. Moreover, on the basis of existing innovations, this revision innovatively proposes the definition and test methods for the maximum and minimum allowable operating junction temperatures, which is a first in China.