T/SEPA 5-2022 Partial discharge EFPI optical fiber ultrasonic sensor probe MEMS manufacturing technology - Part 2: Residual stress determination and regulation procedures

Scope

Scope: This document specifies the determination and control of residual stress in the sensitive structure of SOI silicon wafers when using MEMS technology to fabricate ultrasonic sensors for partial discharge EFPI fiber optic sensors, including the classification and sources of residual stress, stress determination, and stress control. This document is applicable to the determination and control of residual stress in the SOI chips of partial discharge EFPI ultrasonic sensor probes for power equipment. Main technical content: Partial discharge (PD) generates electromagnetic and acoustic signals, emits light, and causes chemical decomposition of insulating materials. These physical and chemical effects can be detected by various diagnostic methods and corresponding sensors. Among them, acoustic methods are commonly used to measure PD generated by insulation defects in power equipment, and sensors based on piezoelectric or acousto-optic effects can be selected. With the development of manufacturing and processing technologies, PD EFPI (Extrinsic Fabry-Perot Interferometer) fiber optic ultrasonic sensor probes fabricated using MEMS (Microelectromechanical System) technology have been widely adopted. This document describes the "Residual Stress Determination and Control Procedures" for "partial discharge EFPI fiber optic ultrasonic sensor probes MEMS manufacturing technology", including the classification and sources of residual stress, stress determination, and stress control, which is applicable to the determination and control of residual stress in the SOI chips of PD EFPI ultrasonic sensor probes for power equipment.

Development Information

Related Standards