GB/T 29332-2012 Active National standards

GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT)

GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT)

Publish Date: 2012-12-31 Implement Date: 2013-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 29332-2012
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Semiconductor transistor
ICS Name: Integrated Components of Semiconductor Devices
Publish Date: 2012-12-31
Implement Date: 2013-06-01
Pages: 54 pages

Scope

This standard provides product-specific requirements for insulated gate bipolar transistors (IGBTs), including terminology, graphical symbols, basic ratings and characteristics, as well as testing methods.

Development Information

Word Count: 98 Thousand words Pages: 54 pages

Referenced Standards

IEC 60747-1:2006 IEC 60747-2 IEC 60747-6 IEC 61340(所有部分)

Adopt standards

IEC 60747-9:2007

Related Standards

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