SJ/T 11976-2025 Active Industry standards-Electronics

SJ/T 11976-2025 Indium-doped zone-melting silicon single crystal for IGBT

Publish Date: 2025-05-09 Implement Date: 2025-08-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: SJ/T 11976-2025

Standard Type: Industry standards

Standard Status: Active

is_force_gb: no

CCS Name: Electronic devices and specialized materials, parts, and structural components

ICS Name: Special materials for electronic technology

Publish Date: 2025-05-09

Implement Date: 2025-08-01

Publisher: 工业和信息化部

Development Information

Related Standards

GB/T 2413-1981 Active

GB/T 2413-1981 Piezoelectric ceramic materials—Measuring methods for determination of volume density

Publish Date: 1980-12-31

GB/T 3389.4-1982 Replaced

GB/T 3389.4-1982 Test methods for the properties of piezoelectric ceramics—Longitudinal length extension vibration mode for rod

Publish Date: 1982-12-30

GB/T 5594.1-1985 Active

GB/T 5594.1-1985 Test methods for properties of structure ceramic used in electronic components—Test method for gas-tightness

Publish Date: 1985-11-27

GB/T 5594.2-1985 Active

GB/T 5594.2-1985 Test methods for properties of structure ceramic used in electronic components—Test method for Youngs elastic modulus and Poisson ratio

Publish Date: 1985-11-27

GB/T 5594.3-1985 Replaced

GB/T 5594.3-1985 Test methods for properties of structure ceramic used in electronic components—Test method for mean coefficient of linear expansion

Publish Date: 1985-11-27

GB/T 5594.4-1985 Replaced

GB/T 5594.4-1985 Test methods for properties of structure ceramic used in electronic components—Test method for dielectric loss angle tangent value

Publish Date: 1985-11-27