GB/T 41751-2022 Active National standards

GB/T 41751-2022 Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers

Publish Date: 2022-10-12 Implement Date: 2023-02-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 41751-2022

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: \nMetal material testing

Publish Date: 2022-10-12

Implement Date: 2023-02-01

Pages: 9 pages

Scope

This document specifies the method of testing the crystal surface curvature radius of GaN single-crystal substrates using a high-resolution X-ray diffractometer.
This document is applicable to the testing of the crystal surface curvature radius of GaN single-crystal substrates prepared by chemical vapor deposition and other methods. The testing of the crystal surface curvature radius of GaN epitaxial wafers can be carried out by referring to this document.