GB/Z 117.101-2026 Photovoltaic modules—Test methods for the detection of potential-induced degradation—Part 1-1:Crystalline silicon—Delamination
GB/Z 117.101-2026 Photovoltaic modules—Test methods for the detection of potential-induced degradation—Part 1-1:Crystalline silicon—Delamination
Basic Information
Scope
This document describes the testing and evaluation methods for the delamination (PID-d) failure phenomenon caused by electric potential-induced degradation (PID) in the laminated parts of single- or double-glass crystalline silicon photovoltaic modules, which is used to evaluate the delamination caused by current transmission between the grounding and the module's battery circuit. The factors accelerating delamination in the testing method of this document include humid-heat exposure, sodium accumulation on the interface, cathode gas precipitation in the battery circuit, metallization, and reduced adhesion of other components in the module due to voltage stimulation, excluding power changes in crystalline silicon photovoltaic modules caused by stress factors (which are within the scope of IEC TS 62804-1).
The testing method specified in this document involves testing the modules in a humid-heat environment chamber and applying the maximum system voltage specified or allowed in the module's manual to the two poles of the module. The actual durability of the module to system voltage stress depends on the installation design and the environmental conditions of the module's operation. This testing method evaluates the sensitivity of the laminated parts of photovoltaic modules to PID-d without considering the actual stresses the modules endure when operating in different climates and system conditions.
This document is not applicable to distinguishing the effects of certain engineering methods that may electrically isolate the module surface to varying degrees, such as using post-rail brackets for installation, clamping installation with edge clamps, and using insulated frames.