GB/T 6256-1986
Active
GB/T 6217-1998
Active
National standards
GB/T 6217-1998 Semiconductor devices-Discrete devices Part 7:Bipolar transistors Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification
GB/T 6217-1998 Semiconductor devices-Discrete devices Part 7:Bipolar transistors Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification
Basic Information
Standard Code:
GB/T 6217-1998
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor transistor
ICS Name:
Diode
Publish Date:
1998-11-17
Implement Date:
1999-06-01
Pages:
16 pages
Development Information
Replace the following standards
GB 6217-1986
Adopt standards
IEC 747-7-1:1989
QC 75102
Related Standards
GB/T 12300-1990
Active
GB/T 12300-1990 Test methods of safe operating area for power transistors
GB/T 16468-1996
Active
GB/T 16468-1996 Series programmes for static induction transistors
GB/T 6218-1996
Active
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications
GB/T 7577-1996
Active
GB/T 7577-1996 Blank detail specification for case-rated bipolar transistors for low-frequency amplification
GB/T 17007-1997
Abolished