DZ/T 0101.12-1994
Active
SJ 20016-1992
Active
Industry standards-Electronics
SJ 20016-1992 Semiconductor discrete device--Detail specification for NPN silicon low-power high-reverse-voltage transistor for type 3DG182 GP,GT and GCT classes
SJ 20016-1992 Semiconductor discrete device--Detail specification for NPN silicon low-power high-reverse-voltage transistor for type 3DG182 GP,GT and GCT classes
Price:
$ 30
Basic Information
Standard Code:
SJ 20016-1992
Standard Type:
Industry standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Field-effect devices
ICS Name:
-
Publish Date:
1992-02-01
Implement Date:
1992-05-01
Pages:
11 pages
Development Information
Referenced Standards
GB 4587-1984
GB/T 7581-1987 Dimensions of outlines for semiconductor discrete devices
GJB 128-1986
GJB 33-1985
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