GB/T 12846-1991
Active
GB/T 13150-2005
Active
National standards
GB/T 13150-2005 Semiconductor devices—Discrete devices—Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A
GB/T 13150-2005 Semiconductor devices—Discrete devices—Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A
Basic Information
Standard Code:
GB/T 13150-2005
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Power semiconductor devices and components
ICS Name:
Crystal thyristors
Publish Date:
2005-03-23
Implement Date:
2005-10-01
Pages:
12 pages
Development Information
Replace the following standards
Adopt standards
IEC 60747-6-2/QC 750111:1991
Related Standards
GB/T 12847-1991
Active
GB/T 12847-1991 Blank detail specification for hydrogen thyratrons
GB/T 13066-1991
Abolished
GB/T 13066-1991 Blank detail specification for unijunction transistors
GB/T 13150-1991
Replaced
GB/T 13150-1991 Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100A
GB/T 13151-1991
Replaced
GB/T 13151-1991 Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,above 100A
GB/T 13152-1991
Abolished