GB/T 13150-1991 Replaced National standards

GB/T 13150-1991 Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100A

Publish Date: 1991-08-29 Implement Date: 1992-05-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 13150-1991

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Power semiconductor devices and components

ICS Name: Crystal thyristors

Publish Date: 1991-08-29

Implement Date: 1992-05-01

Publisher: The National Technical Supervision Bureau

Pages: 12 pages

Development Information

Drafting Persons:

Shi Jianxin

Word Count: 20 Thousand words Pages: 12 pages

Superseded by the following standards

GB/T 13150-2005 Semiconductor devices—Discrete devices—Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A

Related Standards

GB/T 12846-1991 Active

GB/T 12846-1991 General specification for pulse thyratrons

Publish Date: 1991-04-28

GB/T 12847-1991 Active

GB/T 12847-1991 Blank detail specification for hydrogen thyratrons

Publish Date: 1991-04-28

GB/T 13066-1991 Abolished

GB/T 13066-1991 Blank detail specification for unijunction transistors

Publish Date: 1991-07-06

GB/T 13151-1991 Replaced

GB/T 13151-1991 Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,above 100A

Publish Date: 1991-08-29

GB/T 13152-1991 Abolished

GB/T 13152-1991 Blank detail specification for reverse conducting triode thyristors, ambient or case-rated, 5A/5A and above

Publish Date: 1991-08-29

GB/T 13153-1991 Abolished

GB/T 13153-1991 Blank detail specification for gate turn-off thyristors, ambient or case-rated, 5A and above

Publish Date: 1991-08-29