GB/T 6590-1998 Active National standards

GB/T 6590-1998 Semiconductor device-Discrete devices—Part 6:Thyristors Section Two-Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A

Publish Date: 1998-11-17 Implement Date: 1999-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 6590-1998

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor rectifier devices

ICS Name: Crystal thyristors

Publish Date: 1998-11-17

Implement Date: 1999-06-01

Pages: 16 pages

Development Information

Word Count: 23 Thousand words Pages: 16 pages

Replace the following standards

GB 6590-1986

Adopt standards

IEC 747-6-2:1991 QC 750111

Related Standards

GB/T 12846-1991 Active

GB/T 12846-1991 General specification for pulse thyratrons

Publish Date: 1991-04-28

GB/T 12847-1991 Active

GB/T 12847-1991 Blank detail specification for hydrogen thyratrons

Publish Date: 1991-04-28

GB/T 13066-1991 Abolished

GB/T 13066-1991 Blank detail specification for unijunction transistors

Publish Date: 1991-07-06

GB/T 13150-1991 Replaced

GB/T 13150-1991 Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100A

Publish Date: 1991-08-29

GB/T 13151-1991 Replaced

GB/T 13151-1991 Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,above 100A

Publish Date: 1991-08-29

GB/T 13152-1991 Abolished

GB/T 13152-1991 Blank detail specification for reverse conducting triode thyristors, ambient or case-rated, 5A/5A and above

Publish Date: 1991-08-29